NTY100N10G

NTY100N10, NTY100N10G

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Description

Parameters

ParameterNTY100N10G
IC package
Package
TO-264-3, TO-3BPL
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<313 W
Input capacitance of field effect transistor
Ciss
10.11 nFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<123 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<10 mΩId, Vgs = 50A, 10V
Gate charge
QG
350 nCVgs = 10V
FET Feature
FET Feature
Standard