NTR4170NT3G

NTR4170N, NTR4170NT1G, NTR4170NT3G

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Description

Parameters

ParameterNTR4170NT1GNTR4170NT3G
IC package
Package
SOT-23-3
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount(not set)
Power dissipation
P
<780 mW(not set)
Input capacitance of field effect transistor
Ciss
432 pFVds = 15V(not set)
Continuous voltage between drain and source
UDSS
<30 V(not set)
Continuous drain current
IDSS
<3.2 A(not set)
FET channel type
Channel
N-ch(not set)
Channel resistance at ON state
RDS-ON
<55 mΩId, Vgs = 3.2A, 10V(not set)
Gate charge
QG
4.76 nCVgs = 4.5V(not set)
FET Feature
FET Feature
Logic Level Gate(not set)