NTR1P02LT1G

NTR1P02, NTR1P02LT1, NTR1P02LT1G, NTR1P02LT3G, NTR1P02T1, NTR1P02T1G, NTR1P02T3, NTR1P02T3G

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Description

Parameters

ParameterNTR1P02LT1NTR1P02LT1GNTR1P02LT3GNTR1P02T1NTR1P02T1GNTR1P02T3NTR1P02T3G
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mountSurface mount(not set)Surface mountSurface mountSurface mountSurface mount
Power dissipation
P
<400 mW<400 mW(not set)<400 mW<400 mW<400 mW<400 mW
Input capacitance of field effect transistor
Ciss
225 pFVds = 5V225 pFVds = 5V(not set)165 pFVds = 5V165 pFVds = 5V165 pFVds = 5V165 pFVds = 5V
Continuous voltage between drain and source
UDSS
<20 V<20 V(not set)<20 V<20 V<20 V<20 V
Continuous drain current
IDSS
<1.3 A<1.3 A(not set)<1 A<1 A<1 A<1 A
FET channel type
Channel
P-chP-ch(not set)P-chP-chP-chP-ch
Channel resistance at ON state
RDS-ON
<220 mΩId, Vgs = 750mA, 4.5V<220 mΩId, Vgs = 750mA, 4.5V(not set)<180 mΩId, Vgs = 1.5A, 10V<180 mΩId, Vgs = 1.5A, 10V<180 mΩId, Vgs = 1.5A, 10V<180 mΩId, Vgs = 1.5A, 10V
Gate charge
QG
5.5 nCVgs = 4V5.5 nCVgs = 4V(not set)2.5 nCVgs = 5V2.5 nCVgs = 5V2.5 nCVgs = 5V2.5 nCVgs = 5V
FET Feature
FET Feature
Logic Level GateLogic Level Gate(not set)Logic Level GateLogic Level GateLogic Level GateLogic Level Gate