NTQS6463R2

NTQS6463, NTQS6463R2

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Description

Parameters

ParameterNTQS6463R2
IC package
Package
8-TSSOP
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.39 W
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<6.8 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<20 mΩId, Vgs = 6.8A, 4.5V
Gate charge
QG
50 nCVgs = 5V
FET Feature
FET Feature
Logic Level Gate