NTMSD6N303R2

NTMSD6N303, NTMSD6N303R2, NTMSD6N303R2G, NTMSD6N303R2SG

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Description

Parameters

ParameterNTMSD6N303R2NTMSD6N303R2GNTMSD6N303R2SG
IC package
Package
8-SOIC (3.9mm Width)
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2 W
Input capacitance of field effect transistor
Ciss
950 pFVds = 24V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<6 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<32 mΩId, Vgs = 6A, 10V
MOSFET series
Series
FETKY™
Gate charge
QG
30 nCVgs = 10V
FET Feature
FET Feature
Diode (Isolated)