NTLJS4114NT1G

NTLJS4114N, NTLJS4114NT1G

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Description

Parameters

ParameterNTLJS4114NT1G
IC package
Package
6-WDFN
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<700 mW
Input capacitance of field effect transistor
Ciss
650 pFVds = 15V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<3.6 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<35 mΩId, Vgs = 2A, 4.5V
Gate charge
QG
13 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate