NTLJS3113P

NTLJS3113P, NTLJS3113PT1G, NTLJS3113PTAG

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Description

Parameters

ParameterNTLJS3113PT1GNTLJS3113PTAG
IC package
Package
6-WDFN
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<700 mW
Input capacitance of field effect transistor
Ciss
1.329 nFVds = 16V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<3.5 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<40 mΩId, Vgs = 3A, 4.5V
Gate charge
QG
15.7 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate