NTLJS1102P

NTLJS1102P, NTLJS1102PTAG, NTLJS1102PTBG

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Description

Parameters

ParameterNTLJS1102PTAGNTLJS1102PTBG
IC package
Package
6-WDFN
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<700 mW
Input capacitance of field effect transistor
Ciss
1.585 nFVds = 4V
Continuous voltage between drain and source
UDSS
<8 V
Continuous drain current
IDSS
<3.7 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<36 mΩId, Vgs = 6.2A, 4.5V
Gate charge
QG
25 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate