NTLJF3117P

NTLJF3117P, NTLJF3117PT1G, NTLJF3117PTAG

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Description

Parameters

ParameterNTLJF3117PT1GNTLJF3117PTAG
IC package
Package
6-WDFN
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<710 mW
Input capacitance of field effect transistor
Ciss
531 pFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<2.3 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<100 mΩId, Vgs = 2A, 4.5V
Gate charge
QG
6.2 nCVgs = 4.5V
FET Feature
FET Feature
Diode (Isolated)