NTHS4501N

NTHS4501N, NTHS4501NT1, NTHS4501NT1G

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Description

Parameters

ParameterNTHS4501NT1NTHS4501NT1G
IC package
Package
8-ChipFET™
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.3 W
Input capacitance of field effect transistor
Ciss
462 pFVds = 24V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<4.9 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<38 mΩId, Vgs = 4.9A, 10V
Gate charge
QG
9.1 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate