NTHS4166NT1G

NTHS4166N, NTHS4166NT1G

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Description

Parameters

ParameterNTHS4166NT1G
IC package
Package
8-ChipFET™
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<800 mW
Input capacitance of field effect transistor
Ciss
900 pFVds = 15V
Continuous voltage between drain and source
UDSS
<30 V
Continuous drain current
IDSS
<4.9 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<22 mΩId, Vgs = 4.9A, 10V
Gate charge
QG
9.2 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate