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| Parameter | NTHD4P02FT1G | |
|---|---|---|
IC package | Package | 8-ChipFET™ |
Manufacturer | Manufacturer | ON Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <1.1 W |
Input capacitance of field effect transistor | Ciss | 300 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <2.2 A |
FET channel type | Channel | P-ch |
Channel resistance at ON state | RDS-ON | <155 mΩId, Vgs = 2.2A, 4.5V |
Gate charge | QG | 6 nCVgs = 4.5V |
FET Feature | FET Feature | Diode (Isolated) |