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| Parameter | NTHD4N02FT1 | NTHD4N02FT1G | |
|---|---|---|---|
IC package | Package | 8-ChipFET™ | |
Manufacturer | Manufacturer | ON Semiconductor | |
Type of mounting a component on a board/circuit | Mount | Surface mount | |
Power dissipation | P | <910 mW | |
Input capacitance of field effect transistor | Ciss | 300 pFVds = 10V | |
Continuous voltage between drain and source | UDSS | <20 V | |
Continuous drain current | IDSS | <2.9 A | |
FET channel type | Channel | N-ch | |
Channel resistance at ON state | RDS-ON | <80 mΩId, Vgs = 2.9A, 4.5V | |
Gate charge | QG | 4 nCVgs = 4.5V | |
FET Feature | FET Feature | Diode (Isolated) | |