NTGS5120P

NTGS5120P, NTGS5120PT1G

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Description

Parameters

ParameterNTGS5120PT1G
IC package
Package
6-TSOP
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<600 mW
Input capacitance of field effect transistor
Ciss
942 pFVds = 30V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<1.8 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<111 mΩId, Vgs = 2.9A, 10V
Gate charge
QG
18.1 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate