NTGS3130N

NTGS3130N, NTGS3130NT1G

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Description

Parameters

ParameterNTGS3130NT1G
IC package
Package
6-TSOP
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<600 mW
Input capacitance of field effect transistor
Ciss
935 pFVds = 16V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<4.2 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<24 mΩId, Vgs = 5.6A, 4.5A
Gate charge
QG
20.3 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate