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| Parameter | NTGD4169FT1G | |
|---|---|---|
IC package | Package | 6-TSOP |
Manufacturer | Manufacturer | ON Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <900 mW |
Input capacitance of field effect transistor | Ciss | 295 pFVds = 15V |
Continuous voltage between drain and source | UDSS | <30 V |
Continuous drain current | IDSS | <2.6 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <90 mΩId, Vgs = 2.6A, 4.5V |
Gate charge | QG | 5.5 nCVgs = 4.5V |
FET Feature | FET Feature | Diode (Isolated) |