NTGD3147

NTGD3147, NTGD3147FT1G

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Description

Parameters

ParameterNTGD3147FT1G
IC package
Package
6-TSOP
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1 W
Input capacitance of field effect transistor
Ciss
400 pFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<2.2 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<145 mΩId, Vgs = 2.2A, 4.5V
Gate charge
QG
5.5 nCVgs = 4.5V
FET Feature
FET Feature
Diode (Isolated)