NTD4857N-35G

NTD4857N, NTD4857N-1G, NTD4857N-35G, NTD4857NA-1G, NTD4857NAT4G, NTD4857NT4G

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Description

Parameters

ParameterNTD4857N-1GNTD4857N-35GNTD4857NA-1GNTD4857NAT4GNTD4857NT4G
IC package
Package
IPak, TO-251, DPak, VPak (3 straight leads + tab)IPak, TO-251, DPak (3 straight short leads + tab)DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-holeThrough-hole(not set)Surface mountSurface mount
Power dissipation
P
<1.31 W<1.31 W(not set)<1.31 W<1.31 W
Input capacitance of field effect transistor
Ciss
1.96 nFVds = 12V1.96 nFVds = 12V(not set)1.96 nFVds = 12V1.96 nFVds = 12V
Continuous voltage between drain and source
UDSS
<25 V<25 V(not set)<25 V<25 V
Continuous drain current
IDSS
<12 A<12 A(not set)<12 A<12 A
FET channel type
Channel
N-chN-ch(not set)N-chN-ch
Channel resistance at ON state
RDS-ON
<5.7 mΩId, Vgs = 30A, 10V<5.7 mΩId, Vgs = 30A, 10V(not set)<5.7 mΩId, Vgs = 30A, 10V<5.7 mΩId, Vgs = 30A, 10V
Gate charge
QG
24 nCVgs = 4.5V24 nCVgs = 4.5V(not set)24 nCVgs = 4.5V24 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level GateLogic Level Gate(not set)Logic Level GateLogic Level Gate