NTD4856N

NTD4856N, NTD4856N-1G, NTD4856N-35G, NTD4856NT4G

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Description

Parameters

ParameterNTD4856N-1GNTD4856N-35GNTD4856NT4G
IC package
Package
IPak, TO-251, DPak, VPak (3 straight leads + tab)IPak, TO-251, DPak (3 straight short leads + tab)DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-holeThrough-holeSurface mount
Power dissipation
P
<1.33 W
Input capacitance of field effect transistor
Ciss
2.241 nFVds = 12V
Continuous voltage between drain and source
UDSS
<25 V
Continuous drain current
IDSS
<13.3 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<4.7 mΩId, Vgs = 30A, 10V
Gate charge
QG
27 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate