NTD4809N-1G

NTD4809N, NTD4809N-1G, NTD4809N-35G, NTD4809NA-1G, NTD4809NA-35G, NTD4809NAT4G, NTD4809NH-1G, NTD4809NH-35G, NTD4809NHT4G, NTD4809NT4G

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Description

Parameters

Parameter		NTD4809N-1G	NTD4809N-35G	NTD4809NA-1G	NTD4809NA-35G	NTD4809NAT4G	NTD4809NH-1G	NTD4809NH-35G	NTD4809NHT4G	NTD4809NT4G
IC package	Package	IPak, TO-251, DPak, VPak (3 straight leads + tab)	IPak, TO-251, DPak (3 straight short leads + tab)	IPak, TO-251, DPak, VPak (3 straight leads + tab)	IPak, TO-251, DPak (3 straight short leads + tab)	DPak, TO-252 (2 leads+tab), SC-63	IPak, TO-251, DPak, VPak (3 straight leads + tab)	IPak, TO-251, DPak (3 straight short leads + tab)	DPak, TO-252 (2 leads+tab), SC-63	DPak, TO-252 (2 leads+tab), SC-63
Manufacturer	Manufacturer	ON Semiconductor
Type of mounting a component on a board/circuit	Mount	Through-hole	Through-hole	Through-hole	Through-hole	Surface mount	Through-hole	Through-hole	Surface mount	Surface mount
Power dissipation	P	<1.3 W	<1.3 W	<2 W	<2 W	<2 W	<1.3 W	<1.3 W	<1.3 W	<1.3 W
Input capacitance of field effect transistor	C_iss	1.456 nFVds = 12V	1.456 nFVds = 12V	1.456 nFVds = 12V	1.456 nFVds = 12V	1.456 nFVds = 12V	2.155 nFVds = 12V	2.155 nFVds = 12V	2.155 nFVds = 12V	1.456 nFVds = 12V
Continuous voltage between drain and source	U_DSS	<30 V
Continuous drain current	I_DSS	<9 A
FET channel type	Channel	N-ch
Channel resistance at ON state	R_DS-ON	<9 mΩId, Vgs = 30A, 10V
Gate charge	Q_G	13 nCVgs = 4.5V	13 nCVgs = 4.5V	13 nCVgs = 4.5V	13 nCVgs = 4.5V	13 nCVgs = 4.5V	15 nCVgs = 4.5V	15 nCVgs = 4.5V	15 nCVgs = 4.5V	13 nCVgs = 4.5V
FET Feature	FET Feature	Logic Level Gate	Logic Level Gate	Standard	Standard	Standard	Logic Level Gate	Logic Level Gate	Logic Level Gate	Logic Level Gate