NTD3813N-35G

NTD3813N, NTD3813N-1G, NTD3813N-35G, NTD3813NT4G

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Description

Parameters

ParameterNTD3813N-1GNTD3813N-35GNTD3813NT4G
IC package
Package
IPak, TO-251, DPak, VPak (3 straight leads + tab)IPak, TO-251, DPak (3 straight short leads + tab)DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-holeThrough-holeSurface mount
Power dissipation
P
<1.2 W
Input capacitance of field effect transistor
Ciss
963 pFVds = 12V
Continuous voltage between drain and source
UDSS
<16 V
Continuous drain current
IDSS
<9.6 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<8.75 mΩId, Vgs = 15A, 10V
Gate charge
QG
12.8 nCVgs = 4.5V
FET Feature
FET Feature
Logic Level Gate