NTD20N06-1G

NTD20N06, NTD20N06-001, NTD20N06-1G, NTD20N06G, NTD20N06L-001, NTD20N06L-1G, NTD20N06LG, NTD20N06LT4, NTD20N06LT4G, NTD20N06T4, NTD20N06T4G

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Description

Parameters

ParameterNTD20N06-001NTD20N06-1GNTD20N06GNTD20N06L-001NTD20N06L-1GNTD20N06LGNTD20N06LT4NTD20N06LT4GNTD20N06T4NTD20N06T4G
IC package
Package
IPak, TO-251, DPak, VPak (3 straight leads + tab)IPak, TO-251, DPak, VPak (3 straight leads + tab)DPak, TO-252 (2 leads+tab), SC-63IPak, TO-251, DPak, VPak (3 straight leads + tab)IPak, TO-251, DPak, VPak (3 straight leads + tab)IPak, TO-251, DPak, VPak (3 straight leads + tab)DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.36 W
Input capacitance of field effect transistor
Ciss
1.015 nFVds = 25V1.015 nFVds = 25V1.015 nFVds = 25V990 pFVds = 25V990 pFVds = 25V990 pFVds = 25V990 pFVds = 25V990 pFVds = 25V1.015 nFVds = 25V1.015 nFVds = 25V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<20 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<46 mΩId, Vgs = 10A, 10V<46 mΩId, Vgs = 10A, 10V<46 mΩId, Vgs = 10A, 10V<48 mΩId, Vgs = 10A, 5V<48 mΩId, Vgs = 10A, 5V<48 mΩId, Vgs = 10A, 5V<48 mΩId, Vgs = 10A, 5V<48 mΩId, Vgs = 10A, 5V<46 mΩId, Vgs = 10A, 10V<46 mΩId, Vgs = 10A, 10V
Gate charge
QG
30 nCVgs = 10V30 nCVgs = 10V30 nCVgs = 10V32 nCVgs = 5V32 nCVgs = 5V32 nCVgs = 5V32 nCVgs = 5V32 nCVgs = 5V30 nCVgs = 10V30 nCVgs = 10V
FET Feature
FET Feature
StandardStandardStandardLogic Level GateLogic Level GateLogic Level GateLogic Level GateLogic Level GateStandardStandard