NTD12N10

NTD12N10, NTD12N10-1G, NTD12N10G, NTD12N10T4, NTD12N10T4G

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Description

Parameters

ParameterNTD12N10-1GNTD12N10GNTD12N10T4NTD12N10T4G
IC package
Package
IPak, TO-251, DPak, VPak (3 straight leads + tab)DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.28 W
Input capacitance of field effect transistor
Ciss
550 pFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<12 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<165 mΩId, Vgs = 6A, 10V
Gate charge
QG
20 nCVgs = 10V
FET Feature
FET Feature
Standard