NTB75N03

NTB75N03, NTB75N03-006, NTB75N03-06T4, NTB75N03-6G, NTB75N03-6T4G, NTB75N03L09G, NTB75N03L09T4, NTB75N03L09T4G, NTB75N03R, NTB75N03RG, NTB75N03RT4, NTB75N03RT4G

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Description

Parameters

ParameterNTB75N03-006NTB75N03-06T4NTB75N03-6GNTB75N03-6T4GNTB75N03L09GNTB75N03L09T4NTB75N03L09T4GNTB75N03RNTB75N03RGNTB75N03RT4NTB75N03RT4G
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2.5 W<2.5 W<2.5 W<2.5 W<2.5 W<2.5 W<2.5 W<1.25 W<1.25 W<1.25 W<1.25 W
Input capacitance of field effect transistor
Ciss
5.635 nFVds = 25V5.635 nFVds = 25V5.635 nFVds = 25V5.635 nFVds = 25V5.635 nFVds = 25V5.635 nFVds = 25V5.635 nFVds = 25V1.333 nFVds = 20V1.333 nFVds = 20V1.333 nFVds = 20V1.333 nFVds = 20V
Continuous voltage between drain and source
UDSS
<30 V<30 V<30 V<30 V<30 V<30 V<30 V<25 V<25 V<25 V<25 V
Continuous drain current
IDSS
<75 A<75 A<75 A<75 A<75 A<75 A<75 A<9.7 A<9.7 A<9.7 A<9.7 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<6.5 mΩId, Vgs = 37.5A, 10V<6.5 mΩId, Vgs = 37.5A, 10V<6.5 mΩId, Vgs = 37.5A, 10V<6.5 mΩId, Vgs = 37.5A, 10V<8 mΩId, Vgs = 37.5A, 5V<8 mΩId, Vgs = 37.5A, 5V<8 mΩId, Vgs = 37.5A, 5V<8 mΩId, Vgs = 20A, 10V<8 mΩId, Vgs = 20A, 10V<8 mΩId, Vgs = 20A, 10V<8 mΩId, Vgs = 20A, 10V
Gate charge
QG
75 nCVgs = 5V75 nCVgs = 5V75 nCVgs = 5V75 nCVgs = 5V75 nCVgs = 5V75 nCVgs = 5V75 nCVgs = 5V13.2 nCVgs = 10V13.2 nCVgs = 10V13.2 nCVgs = 10V13.2 nCVgs = 10V
FET Feature
FET Feature
Logic Level Gate