NTB60N06

NTB60N06, NTB60N06G, NTB60N06L, NTB60N06LG, NTB60N06LT4, NTB60N06LT4G, NTB60N06T4, NTB60N06T4G

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Description

Parameters

ParameterNTB60N06GNTB60N06LNTB60N06LGNTB60N06LT4NTB60N06LT4GNTB60N06T4NTB60N06T4G
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2.4 W
Input capacitance of field effect transistor
Ciss
3.22 nFVds = 25V3.075 nFVds = 25V3.075 nFVds = 25V3.075 nFVds = 25V3.075 nFVds = 25V3.22 nFVds = 25V3.22 nFVds = 25V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<60 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<14 mΩId, Vgs = 30A, 10V<16 mΩId, Vgs = 30A, 5V<16 mΩId, Vgs = 30A, 5V<16 mΩId, Vgs = 30A, 5V<16 mΩId, Vgs = 30A, 5V<14 mΩId, Vgs = 30A, 10V<14 mΩId, Vgs = 30A, 10V
Gate charge
QG
81 nCVgs = 10V65 nCVgs = 5V65 nCVgs = 5V65 nCVgs = 5V65 nCVgs = 5V81 nCVgs = 10V81 nCVgs = 10V
FET Feature
FET Feature
StandardLogic Level GateLogic Level GateLogic Level GateLogic Level GateStandardStandard