NTB5605T4G

NTB5605, NTB5605T4G

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Description

Parameters

ParameterNTB5605T4G
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<88 W
Input capacitance of field effect transistor
Ciss
1.19 nFVds = 25V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<18.5 A
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<140 mΩId, Vgs = 8.5A, 5V
Gate charge
QG
22 nCVgs = 5V
FET Feature
FET Feature
Logic Level Gate