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| Parameter | NTB52N10G | NTB52N10T4 | NTB52N10T4G | |
|---|---|---|---|---|
IC package | Package | D²Pak, TO-263 (2 leads + tab) | ||
Manufacturer | Manufacturer | ON Semiconductor | ||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Power dissipation | P | <2 W | ||
Input capacitance of field effect transistor | Ciss | 3.15 nFVds = 25V | ||
Continuous voltage between drain and source | UDSS | <100 V | ||
Continuous drain current | IDSS | <52 A | ||
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <30 mΩId, Vgs = 26A, 10V | ||
Gate charge | QG | 135 nCVgs = 10V | ||
FET Feature | FET Feature | Standard | ||