NTB35N15

NTB35N15, NTB35N15G, NTB35N15T4, NTB35N15T4G

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Description

Parameters

ParameterNTB35N15GNTB35N15T4NTB35N15T4G
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<2 W
Input capacitance of field effect transistor
Ciss
3.2 nFVds = 25V
Continuous voltage between drain and source
UDSS
<150 V
Continuous drain current
IDSS
<37 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<50 mΩId, Vgs = 18.5A, 10V
Gate charge
QG
100 nCVgs = 10V
FET Feature
FET Feature
Standard