NTB30N06

NTB30N06, NTB30N06G, NTB30N06L, NTB30N06LG, NTB30N06LT4, NTB30N06LT4G, NTB30N06T4, NTB30N06T4G

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Description

Parameters

ParameterNTB30N06GNTB30N06LNTB30N06LGNTB30N06LT4NTB30N06LT4GNTB30N06T4NTB30N06T4G
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<88.2 W
Input capacitance of field effect transistor
Ciss
1.2 nFVds = 25V1.15 nFVds = 25V1.15 nFVds = 25V1.15 nFVds = 25V1.15 nFVds = 25V1.2 nFVds = 25V1.2 nFVds = 25V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<27 A<30 A<30 A<30 A<30 A<27 A<27 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<42 mΩId, Vgs = 15A, 10V<46 mΩId, Vgs = 15A. 5V<46 mΩId, Vgs = 15A. 5V<46 mΩId, Vgs = 15A. 5V<46 mΩId, Vgs = 15A. 5V<42 mΩId, Vgs = 15A, 10V<42 mΩId, Vgs = 15A, 10V
Gate charge
QG
46 nCVgs = 10V32 nCVgs = 5V32 nCVgs = 5V32 nCVgs = 5V32 nCVgs = 5V46 nCVgs = 10V46 nCVgs = 10V
FET Feature
FET Feature
StandardLogic Level GateLogic Level GateLogic Level GateLogic Level GateStandardStandard