NTB18N06G

NTB18N06, NTB18N06G, NTB18N06L, NTB18N06LG, NTB18N06LT4, NTB18N06LT4G, NTB18N06T4, NTB18N06T4G

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Description

Parameters

ParameterNTB18N06GNTB18N06LNTB18N06LGNTB18N06LT4NTB18N06LT4GNTB18N06T4NTB18N06T4G
IC package
Package
D²Pak, TO-263 (2 leads + tab)
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<48.4 W
Input capacitance of field effect transistor
Ciss
450 pFVds = 25V440 pFVds = 25V440 pFVds = 25V440 pFVds = 25V440 pFVds = 25V450 pFVds = 25V450 pFVds = 25V
Continuous voltage between drain and source
UDSS
<60 V
Continuous drain current
IDSS
<15 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<90 mΩId, Vgs = 7.5A, 10V<100 mΩId, Vgs = 7.5A, 5V<100 mΩId, Vgs = 7.5A, 5V<100 mΩId, Vgs = 7.5A, 5V<100 mΩId, Vgs = 7.5A, 5V<90 mΩId, Vgs = 7.5A, 10V<90 mΩId, Vgs = 7.5A, 10V
Gate charge
QG
22 nCVgs = 10V20 nCVgs = 5V20 nCVgs = 5V20 nCVgs = 5V20 nCVgs = 5V22 nCVgs = 10V22 nCVgs = 10V
FET Feature
FET Feature
StandardLogic Level GateLogic Level GateLogic Level GateLogic Level GateStandardStandard