NDS352P

NDS352P

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Description

Parameters

ParameterNDS352P
IC package
Package
3-SSOT, SuperSOT-3
Manufacturer
Manufacturer
Fairchild Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<460 mW
Input capacitance of field effect transistor
Ciss
125 pFVds = 10V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<850 mA
FET channel type
Channel
P-ch
Channel resistance at ON state
RDS-ON
<350 mΩId, Vgs = 1A, 10V
Gate charge
QG
4 nCVgs = 5V
FET Feature
FET Feature
Logic Level Gate