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| Parameter | MTY100N10E | |
|---|---|---|
IC package | Package | TO-264-3, TO-3BPL |
Manufacturer | Manufacturer | ON Semiconductor |
Type of mounting a component on a board/circuit | Mount | Through-hole |
Power dissipation | P | <300 W |
Input capacitance of field effect transistor | Ciss | 10.64 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <100 V |
Continuous drain current | IDSS | <100 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <11 mΩId, Vgs = 50A, 10V |
Gate charge | QG | 378 nCVgs = 10V |
FET Feature | FET Feature | Standard |