MTP10N10

MTP10N10, MTP10N10ELG

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Description

Parameters

ParameterMTP10N10ELG
IC package
Package
TO-220-3 (Straight Leads)
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<1.75 W
Input capacitance of field effect transistor
Ciss
1.04 nFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<10 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<220 mΩId, Vgs = 5A, 5V
Gate charge
QG
15 nCVgs = 5V
FET Feature
FET Feature
Logic Level Gate