MTD6N15T4G

MTD6N15, MTD6N15T4, MTD6N15T4G

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Description

Parameters

ParameterMTD6N15T4MTD6N15T4G
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.25 W
Input capacitance of field effect transistor
Ciss
1.2 nFVds = 25V
Continuous voltage between drain and source
UDSS
<150 V
Continuous drain current
IDSS
<6 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<300 mΩId, Vgs = 3A, 10V
Gate charge
QG
30 nCVgs = 10V
FET Feature
FET Feature
Standard