MTD10N10

MTD10N10, MTD10N10ELT4

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterMTD10N10ELT4
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<1.75 W
Input capacitance of field effect transistor
Ciss
1.04 nFVds = 25V
Continuous voltage between drain and source
UDSS
<100 V
Continuous drain current
IDSS
<10 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<220 mΩId, Vgs = 5A, 5V
Gate charge
QG
15 nCVgs = 5V
FET Feature
FET Feature
Logic Level Gate