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| Parameter | MMBF170-7 | MMBF170-7-F | MMBF170LT1 | MMBF170LT1G | MMBF170LT3 | MMBF170LT3G | |
|---|---|---|---|---|---|---|---|
IC package | Package | SOT-23-3, TO-236-3, Micro3™, SSD3, SST3 | |||||
Manufacturer | Manufacturer | Diodes Inc | Diodes Inc | ON Semiconductor | ON Semiconductor | ON Semiconductor | ON Semiconductor |
Type of mounting a component on a board/circuit | Mount | Surface mount | |||||
Power dissipation | P | <300 mW | <300 mW | <225 mW | <225 mW | <225 mW | <225 mW |
Input capacitance of field effect transistor | Ciss | 40 pFVds = 10V | 40 pFVds = 10V | 60 pFVds = 10V | 60 pFVds = 10V | 60 pFVds = 10V | 60 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <60 V | |||||
Continuous drain current | IDSS | <500 mA | |||||
FET channel type | Channel | N-ch | |||||
Channel resistance at ON state | RDS-ON | <5 ΩId, Vgs = 200mA, 10V | |||||
FET Feature | FET Feature | Standard | Standard | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |