MGSF1N02ELT1

MGSF1N02, MGSF1N02ELT1, MGSF1N02LT1, MGSF1N02LT1G

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Description

Parameters

ParameterMGSF1N02ELT1MGSF1N02LT1MGSF1N02LT1G
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<400 mW
Input capacitance of field effect transistor
Ciss
160 pFVds = 5V125 pFVds = 5V125 pFVds = 5V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<750 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<85 mΩId, Vgs = 1A, 4.5V<90 mΩId, Vgs = 1.2A, 10V<90 mΩId, Vgs = 1.2A, 10V
FET Feature
FET Feature
Logic Level Gate