MGSF1N02

MGSF1N02, MGSF1N02ELT1, MGSF1N02LT1, MGSF1N02LT1G

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterMGSF1N02ELT1MGSF1N02LT1MGSF1N02LT1G
IC package
Package
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Manufacturer
Manufacturer
ON Semiconductor
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<400 mW
Input capacitance of field effect transistor
Ciss
160 pFVds = 5V125 pFVds = 5V125 pFVds = 5V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<750 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<85 mΩId, Vgs = 1A, 4.5V<90 mΩId, Vgs = 1.2A, 10V<90 mΩId, Vgs = 1.2A, 10V
FET Feature
FET Feature
Logic Level Gate