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| Parameter | MCH5837-TL-E | |
|---|---|---|
Manufacturer | Manufacturer | SANYO Semiconductor (U.S.A) Co |
Type of mounting a component on a board/circuit | Mount | Surface mount |
Power dissipation | P | <800 mW |
Input capacitance of field effect transistor | Ciss | 115 pFVds = 10V |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <2 A |
FET channel type | Channel | N-ch |
Channel resistance at ON state | RDS-ON | <145 mΩId, Vgs = 1A, 4V |
Gate charge | QG | 1.8 nCVgs = 4V |
FET Feature | FET Feature | Diode (Isolated) |