IXTY1R4N100P

IXTY1, IXTY1R4N100P, IXTY1R4N120P, IXTY1R4N60P, IXTY1R6N100D2, IXTY1R6N50D2, IXTY1R6N50P

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Description

Parameters

ParameterIXTY1R4N100PIXTY1R4N120PIXTY1R4N60PIXTY1R6N100D2IXTY1R6N50D2IXTY1R6N50P
IC package
Package
DPak, TO-252 (2 leads+tab), SC-63
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Surface mount
Power dissipation
P
<63 W(not set)<50 W<100 W<100 W<43 W
Input capacitance of field effect transistor
Ciss
450 pFVds = 25V(not set)140 pFVds = 25V645 pFVds = 25V645 pFVds = 25V140 pFVds = 25V
Continuous voltage between drain and source
UDSS
(not set)(not set)<600 V(not set)<500 V<500 V
Continuous drain current
IDSS
<1.4 A<1.4 A<1.4 A<1.6 A<1.6 A<1.6 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<11 ΩId, Vgs = 500mA, 10V(not set)<9 ΩId, Vgs = 500mA, 10V<10 ΩId, Vgs = 800mA, 0V<2.3 ΩId, Vgs = 800mA, 0V<6.5 ΩId, Vgs = 500mA, 10V
MOSFET series
Series
Polar™(not set)PolarHV™(not set)(not set)PolarHV™
Gate charge
QG
17.8 nCVgs = 10V(not set)5.2 nCVgs = 10V27 nCVgs = 5V23.7 nCVgs = 5V3.9 nCVgs = 10V
FET Feature
FET Feature
StandardStandardStandardDepletion ModeDepletion ModeStandard