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| Parameter | IXTT30N50L | IXTT30N50L2 | IXTT30N50P | |
|---|---|---|---|---|
IC package | Package | TO-268 | ||
Manufacturer | Manufacturer | IXYS | ||
Type of mounting a component on a board/circuit | Mount | Surface mount | ||
Power dissipation | P | <400 W | <400 W | <460 W |
Input capacitance of field effect transistor | Ciss | 10.2 nFVds = 25V | 8.1 nFVds = 25V | 4.15 nFVds = 25V |
Continuous voltage between drain and source | UDSS | <500 V | ||
Continuous drain current | IDSS | <30 A | ||
FET channel type | Channel | N-ch | ||
Channel resistance at ON state | RDS-ON | <200 mΩId, Vgs = 500mA, 10V | ||
MOSFET series | Series | (not set) | Linear L2™ | PolarHV™ |
Gate charge | QG | 240 nCVgs = 10V | 240 nCVgs = 10V | 70 nCVgs = 10V |
FET Feature | FET Feature | Standard | ||