IXTP6N50D2

IXTP6N50, IXTP6N50D2, IXTP6N50P

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Description

Parameters

ParameterIXTP6N50D2IXTP6N50P
IC package
Package
TO-220ABTO-220
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<300 W<100 W
Input capacitance of field effect transistor
Ciss
2.8 nFVds = 25V740 pFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<6 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<500 mΩId, Vgs = 3A, 0V<1.1 ΩId, Vgs = 500mA, 10V
MOSFET series
Series
(not set)PolarHV™
Gate charge
QG
96 nCVgs = 5V14.6 nCVgs = 10V
FET Feature
FET Feature
Depletion ModeStandard