IXTP1N120

IXTP1N120, IXTP1N120P

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Description

Parameters

ParameterIXTP1N120P
IC package
Package
TO-220
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<63 W
Input capacitance of field effect transistor
Ciss
550 pFVds = 25V
Continuous drain current
IDSS
<1 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<20 ΩId, Vgs = 500mA, 10V
MOSFET series
Series
PolarVHV™
Gate charge
QG
17.6 nCVgs = 10V
FET Feature
FET Feature
Standard