IXTP08N100P

IXTP08N100, IXTP08N100D2, IXTP08N100P

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Description

Parameters

ParameterIXTP08N100D2IXTP08N100P
IC package
Package
TO-220ABTO-220
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<60 W<42 W
Input capacitance of field effect transistor
Ciss
325 pFVds = 10V240 pFVds = 25V
Continuous drain current
IDSS
<800 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<21 ΩId, Vgs = 400mA, 0V<20 ΩId, Vgs = 500mA, 10V
MOSFET series
Series
(not set)Polar™
Gate charge
QG
14.6 nCVgs = 5V11.3 nCVgs = 10V
FET Feature
FET Feature
Depletion ModeStandard