IXTP06N120

IXTP06N120, IXTP06N120P

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Description

Parameters

ParameterIXTP06N120P
IC package
Package
TO-220
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<42 W
Input capacitance of field effect transistor
Ciss
270 pFVds = 25V
Continuous drain current
IDSS
<600 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<32 ΩId, Vgs = 500mA, 10V
MOSFET series
Series
PolarVHV™
Gate charge
QG
13.3 nCVgs = 10V
FET Feature
FET Feature
Standard