IXTP05N100

IXTP05N100, IXTP05N100M

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Description

Parameters

ParameterIXTP05N100M
IC package
Package
TO-220
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<25 W
Input capacitance of field effect transistor
Ciss
260 pFVds = 25V
Continuous drain current
IDSS
<700 mA
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<17 ΩId, Vgs = 375mA, 10V
Gate charge
QG
7.8 nCVgs = 10V
FET Feature
FET Feature
Standard