IXTN60N50

IXTN60N50, IXTN60N50L2

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Description

Parameters

ParameterIXTN60N50L2
IC package
Package
SOT-227B miniBLOC
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
On chassis/wire
Power dissipation
P
<735 W
Input capacitance of field effect transistor
Ciss
24 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<53 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<100 mΩId, Vgs = 30A, 10V
MOSFET series
Series
Linear L2™
Gate charge
QG
610 nCVgs = 10V
FET Feature
FET Feature
Standard