IXTI12N50

IXTI12N50, IXTI12N50P

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Description

Parameters

ParameterIXTI12N50P
IC package
Package
I²Pak, TO-262 (3 straight leads + tab)
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<200 W
Input capacitance of field effect transistor
Ciss
1.83 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<12 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<500 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
Polar™
Gate charge
QG
29 nCVgs = 10V
FET Feature
FET Feature
Standard