IXTH6N90

IXTH6N90, IXTH6N90A

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Description

Parameters

ParameterIXTH6N90A
IC package
Package
TO-247AD
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<180 W
Input capacitance of field effect transistor
Ciss
2.6 nFVds = 25V
Continuous voltage between drain and source
UDSS
<900 V
Continuous drain current
IDSS
<6 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<1.4 ΩId, Vgs = 500mA, 10V
Gate charge
QG
130 nCVgs = 10V
FET Feature
FET Feature
Standard