IXTH30N50

IXTH30N50, IXTH30N50L, IXTH30N50L2, IXTH30N50P

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Description

Parameters

ParameterIXTH30N50LIXTH30N50L2IXTH30N50P
IC package
Package
TO-247AD, TO-247TO-247AD, TO-247TO-247AD, TO-247AD
Manufacturer
Manufacturer
IXYS
Type of mounting a component on a board/circuit
Mount
Through-hole
Power dissipation
P
<400 W<400 W<460 W
Input capacitance of field effect transistor
Ciss
10.2 nFVds = 25V8.1 nFVds = 25V4.15 nFVds = 25V
Continuous voltage between drain and source
UDSS
<500 V
Continuous drain current
IDSS
<30 A
FET channel type
Channel
N-ch
Channel resistance at ON state
RDS-ON
<200 mΩId, Vgs = 500mA, 10V
MOSFET series
Series
MegaMOS™Linear L2™PolarHV™
Gate charge
QG
240 nCVgs = 10V240 nCVgs = 10V70 nCVgs = 10V
FET Feature
FET Feature
Standard